Introduction To Microelectronic Fabrication Jaeger 75.pdf: A Concise Survey of the Most Up-to-Date Techniques in the Field
If you are looking for a book that covers the theory and fabrication of integrated circuits, you might want to check out Introduction To Microelectronic Fabrication Jaeger 75.pdf. This book is written by Richard C. Jaeger, a professor of electrical and computer engineering at Auburn University, and is part of the Modular Series on Solid State Devices. It is devoted exclusively to processing, and is highlighted by careful explanations, clear, simple language, and numerous fully-solved example problems.
Introduction To Microelectronic Fabrication Jaeger 75.pdf assumes a minimal knowledge of integrated circuits and of terminal behavior of electronic components such as resistors, diodes, and MOS and bipolar transistors. It covers the basic processes and structures of monolithic fabrication, such as oxidation, diffusion, ion implantation, photolithography, etching, metallization, and testing. It also introduces the main types of integrated circuits, such as metal-oxide-semiconductor (MOS), complementary MOS (CMOS), and bipolar.
Introduction To Microelectronic Fabrication Jaeger 75.pdf is suitable for courses in Theory and Fabrication of Integrated Circuits. It is also a useful reference for engineers and researchers who want to learn more about the latest techniques in microelectronic fabrication. You can find this book online or in your local library.
To download Introduction To Microelectronic Fabrication Jaeger 75.pdf, you can visit one of these websites:
Google Books [^1^]
Auburn University [^2^]
We hope you enjoy reading Introduction To Microelectronic Fabrication Jaeger 75.pdf and learn a lot from it!
In this section, we will give you a brief overview of the main topics covered in Introduction To Microelectronic Fabrication Jaeger 75.pdf. Each chapter of the book provides a detailed explanation of the concepts and techniques involved in microelectronic fabrication, as well as examples and exercises to test your understanding.
Chapter 1: An Overview of Microelectronic Fabrication
This chapter gives a historical perspective of the development of integrated circuits, from the invention of the transistor in 1947 to the current state-of-the-art devices. It also gives an overview of the monolithic fabrication processes and structures, such as planar technology, isolation techniques, and interconnection schemes. It introduces the basic terminology and notation used in microelectronic fabrication, such as doping concentration, junction depth, sheet resistance, and contact resistance.
Chapter 2: Crystal Growth and Wafer Preparation
This chapter describes the methods and equipment used to grow high-purity single-crystal silicon, which is the most common material for integrated circuits. It explains the principles and parameters of crystal growth techniques, such as Czochralski growth and float-zone growth. It also discusses the wafer preparation steps, such as slicing, polishing, cleaning, and inspection.
Chapter 3: Thermal Oxidation
This chapter covers one of the most important processes in microelectronic fabrication: thermal oxidation. It explains how silicon dioxide (SiO2) is formed on the surface of silicon by exposing it to high-temperature oxygen or water vapor. It discusses the kinetics and mechanisms of oxidation, as well as the factors that affect the oxidation rate and thickness. It also describes the properties and applications of SiO2, such as masking, insulation, passivation, and gate dielectric.
Chapter 4: Diffusion
This chapter covers another fundamental process in microelectronic fabrication: diffusion. It explains how impurities are introduced into silicon by exposing it to high-temperature gas sources or solid sources. It discusses the diffusion equation and its solutions for various boundary conditions and geometries. It also describes the effects of diffusion on device characteristics, such as junction formation, sheet resistance, contact resistance, and parasitic capacitance.
Chapter 5: Ion Implantation
This chapter covers an alternative method to diffusion for introducing impurities into silicon: ion implantation. It explains how ions are accelerated by an electric field and implanted into silicon by overcoming its lattice energy. It discusses the advantages and disadvantages of ion implantation over diffusion, such as better control, lower temperature, higher doping concentration, and damage creation. It also describes the annealing process for repairing the damage and activating the dopants. 248dff8e21